| 发明名称 |
HIGH FREQUENCY SEMICONDUCTOR DEVICE |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high frequency semiconductor device which reduces unevenness in the intrinsic impedance of a high frequency transmission path constituted of a grounded electrode and an interconnection provided on a high frequency semiconductor chip. <P>SOLUTION: A covered electrode 8 to be connected to a ground potential is provided on an active region on the surface side of the high frequency semiconductor chip 2. The high frequency transmission path is constituted between an interconnection 3 provided on the reverse of the chip 2 and the covered electrode 8, with the latter serving as a high frequency ground surface. <P>COPYRIGHT: (C)2003,JPO |
| 申请公布号 |
JP2003163310(A) |
申请公布日期 |
2003.06.06 |
| 申请号 |
JP20010364165 |
申请日期 |
2001.11.29 |
| 申请人 |
FUJITSU QUANTUM DEVICES LTD |
发明人 |
SUZUKI YOJI;MINETANI KEIJI |
| 分类号 |
H01L23/12;H01L21/338;H01L21/60;H01L21/822;H01L23/522;H01L23/66;H01L25/065;H01L27/04;H01L29/778;H01L29/812 |
主分类号 |
H01L23/12 |
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