| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device having a capacitance element which is formed by forming an upper electrode on a lower electrode via a dielectric film, wherein the method allows manufacturing the semiconductor device with high precision and reducing manufacturing processes. SOLUTION: The manufacturing method comprises a step of sequentially laminating a lower electrode material layer 3 and a dielectric film 4 on a substrate 1 to form a reflection protection film 5 together with a laminated film of a portion of the lower electrode material layer 3 and dielectric film 4, a step of forming a photo resist layer 10 on the laminated film, a step of exposing and developing the photo resist layer 10 to a predetermined pattern to form a resist mask 11, a step of patterning the dielectric film 4 and lower electrode material layer 3 via the resist mask 11 to form a lower electrode 12, and a step of forming an upper electrode 25 on the dielectric film 4 to form a capacity element 29. COPYRIGHT: (C)2003,JPO
|
