| 摘要 |
According to the invention, a capacitor comprising an electrode (11) as a memory cell node and a second electrode (20) as a common counter-electrode of the memory cell field is formed in a semiconductor substrate and a field effect transistor (FET) is subsequently created above the capacitor. The aim of the invention is to create a memory cell comprising a capacitor with a vertical construction and a vertical FET situated above said capacitor that can be easily and more reliably produced in terms of the technology involved. To achieve this, two parallel first trenches (10) are etched to a first depth (13) in the semiconductor substrate, a web (11) that is connected by its narrow sides to the semiconductor substrate being formed between the two trenches. The web is severed at the lower end and is separated from the substrate. The suspended web (15) is then provided with a closed dielectric (19). After the trenches have been filled, the FET (23, 24, 25, 26) is applied and is connected to the web as a memory node. |
