发明名称 Substrate processing apparatus
摘要 The prevent invention provides a substrate processing apparatus and a substrate processing method which can process hydrophobic wafers with a fluid mixing nozzle. The substrate processing apparatus comprises processing liquid supply means 66 for supplying a processing liquid, inert gas supply means 67 for supplying an inert gas, and a fluid mixing nozzle 65 for mixing the processing liquid with the inert gas to eject the mixed processing liquid to the substrate, whereby the substrate is processed with the processing liquid, in which the inert gas supply means 67 comprises liquid mixing means 97b for mixing a fluid, IPA, for lowering surface tension of the processing liquid, and the inert gas.
申请公布号 US2003102017(A1) 申请公布日期 2003.06.05
申请号 US20020309049 申请日期 2002.12.04
申请人 TANIYAMA HIROKI 发明人 TANIYAMA HIROKI
分类号 G02F1/13;B08B3/02;C03C23/00;G02F1/1333;H01L21/00;H01L21/304;H01L21/306;H01L21/677;(IPC1-7):B08B3/00 主分类号 G02F1/13
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