| 摘要 |
<p>A semiconductor device comprising an n-channel field-effect transistor and a p-channel field-effect transistor is excellent in drain current characteristic and high in reliability. A silicon nitride film is formed on the side wall of an active trench where the n-channel field-effect transistor is formed, and a silicon nitride film is formed extending only in the channel and vertical directions is formed on the side wall of an active trench of the p-channel field-effect transistor.</p> |
