QUANTUM DOT-BASED MAGNETIC RANDOM ACCESS MEMORY (MRAM) AND METHOD FOR MANUFACTURING SAME

摘要

A magnetic random access memory (MRAM) cell is provided. The magnetic random access memory cell comprises an insulating substrate, an electrically conductive base line provided on the insulating substrate, at least one magnetic quantum dot attached to the base line, and an electrically conductive top line provided across the at least one magnetic quantum dot in a direction transverse to the base line. A junction is thereby formed between the base line and the top line. At least one of the base line and the top line comprise a magnetic material. A method for manufacturing the magnetic random access memory cell is also provided. In addition, an array of magnetic random access memory cells is provided, as well as a method for manufacturing same.