| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for evaluating the time that elapses before the dielectric breakdown of a MOSFET. SOLUTION: The relationship between TAsat and a stress electric filed Eox is obtained. By the impression of any given stress electric field Eox, the time TBD that elapses before an oxide film reaches a dielectric breakdown is measured. Here, by using a high stress electric field Eox (i.e., 12.5) as a stress electric field, it is possible to shorten time necessary for measurement. The time TBD that elapses before a dielectric breakdown is extended parallelly with the electric field dependency (graph TAsat) of an A-mode SILC current to create a graph (a graph indicating the electric field dependency of life). From this graph, it is possible to estimate the time (life) that elapses before a breakdown in any given electric field.
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