| 摘要 |
PURPOSE: A capacitor of a semiconductor device and a manufacturing method thereof are provided to be capable of increasing capacitance by enlarging the surface of a storage node. CONSTITUTION: A stack-type center part(53) is connected with a storage node contact plug(55). At this time, the width of the stack-type center part(53) is larger than that of the storage node contact plug(55). A disc part(373) is connected with the stack-type center part(53), wherein the disc part(373) is pierced by the storage node contact plug(55). At this time, the width of the disc part(373) is larger than that of the stack-type center part(53). A spacer-type peripheral part(61) is formed and spaced apart from the stack-type center part(53) along the edge portion of the disc part(373). At the time, a storage node(70) is completed with the stack-type center part(53), the disc part(373), and the spacer-type peripheral part(61), thereby increasing the capacity of a capacitor.
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