发明名称 SEMICONDUCTOR MEMORY
摘要 PROBLEM TO BE SOLVED: To further improve access speed in a semiconductor memory adopting a late select system to which a lower order bit selecting way of a memory cell array out of read-out addresses is inputted late. SOLUTION: This device is provided with a plurality of data selectors 31, 32 selecting respectively either of a plurality of read-out data read from a plurality of ways and write data held in a WD register 41 for the late select system, and a way selector 35 selecting way data specified by a way selecting signal SAS inputted at read-cycle out of a plurality of outputs of these data selector 31, 32 and passing through them to an output side, further provided with a logic circuit 30 generating a signal by which a data selector of a way side specified by a write address SA of the WL register 13 selects a held write data side when the read-out address SA inputted at read-cycle coincides with a corresponding bit of a write address held in the WA register 13.
申请公布号 JP2003157676(A) 申请公布日期 2003.05.30
申请号 JP20010357936 申请日期 2001.11.22
申请人 HITACHI LTD 发明人 NISHIYAMA MASAHIKO;MITSUMOTO KINYA
分类号 G11C11/41;G06F12/00;G06F12/06;G11C11/413;G11C11/417;(IPC1-7):G11C11/41 主分类号 G11C11/41
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