| 摘要 |
In a fabrication method of semiconductor device, a storage node connected to one of source/drain regions of an MOS (Metal Oxide Semiconductor) transistor provided at a semiconductor substrate is formed along a trench provided through a silicon nitride film, a BPTEOS (Boro Phospho Tetra Ethyl Ortho Silicate) film and a silicon oxide film grown at low temperature. The silicon oxide film grown at low temperature is formed by either atmospheric pressure CVD (chemical vapor deposition) or plasma CVD. Also, a sidewall protection film is formed so as to prevent shorting between adjacent capacitors by growing a film at low temperature. Thus, a semiconductor device of high performance and high reliability can be provided even in a system LSI (Large Scale Integrated circuit) in which a memory circuit and logic circuit are embedded.
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