发明名称 |
III-V nitride semiconductor device, and protection element and power conversion apparatus using the same |
摘要 |
A GaN-based Schottky diode includes a sapphire substrate on which are formed a GaN buffer layer, an n+-type GaN layer, and an n-type GaN layer that has a surface portion thereof shaped to form a protrusion having an upper face with which a Ti electrode forms a Schottky junction and a side face with which a Pt electrode forms a Schottky junction through an Al0.2Ga0.8N layer. A cathode electrode constituted by a TaSi layer forms an ohmic junction with the n+-type GaN layer. The Ti and Pt electrodes constitute a combined anode electrode contributing to increasing a withstand voltage of and decreasing an on-voltage of the Schottky diode.
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申请公布号 |
US2003098462(A1) |
申请公布日期 |
2003.05.29 |
申请号 |
US20020293470 |
申请日期 |
2002.11.14 |
申请人 |
THE FURUKAWA ELECTRIC CO., LTD. |
发明人 |
YOSHIDA SEIKOH |
分类号 |
H01L21/285;H01L21/329;H01L29/20;H01L29/47;H01L29/872;(IPC1-7):H01L31/032 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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