| 摘要 |
Quantum-size electronic devices comprise electrodes and at least one cluster seperated from the said electrodes by a tunnel-transparent gap. The characteristic dimensions for elements of quantum-size devices are determined by the formula in the range 1x4 r0, wherein r0=<CUSTOM-CHARACTER FILE="US06570224-20030527-P00900.TIF" ALT="custom character" HE="20" WI="20" ID="CUSTOM-CHARACTER-00001"/>/(mealpha2c), wherein <CUSTOM-CHARACTER FILE="US06570224-20030527-P00900.TIF" ALT="custom character" HE="20" WI="20" ID="CUSTOM-CHARACTER-00002"/> is Planck's constant, me is the electron mass, alpha=1/137,036 is the fine structure constant, c is the light speed. The cluster may be made of a semiconductor material, conductor, superconductor, high-molecular substance or a covering with a tunnel-transparent dielectric. The matured theory provides possibilities for designing logical devices operating in the mode of transfer and/or storing of several electrons at normal conditions and high temperatures. The operating conditions of the devices are determined. The invention provides basic condition for constructing of high-temperature superconducting components and devices based thereon, as well as for transmitting electric signals and energy loss-free.
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