| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser device which is equipped with a refractive index control layer that is formed through a selective growth method and whose thickness is precisely controlled, superior in reproducibility of an effective refractive index difference, and manufactured in a high yield. SOLUTION: An optical waveguide layer 27 having a wider forbidden band than that of an active layer 25 is provided on one side of the active layer 25, a clad layer 28 having a wider forbidden band than that of the optical waveguide layer 27 is provided outside of the optical waveguide layer 27, and a refractive index control layer 31 equipped with a belt-like window R21 is embedded in the optical waveguide layer 27 through a selective growth method for the formation of an effective refractive index waveguide-type semiconductor laser device. A semiconductor layer 30 is provided through a selective growth method prior to the formation of the refractive index control layer 31 to the optical waveguide layer 27 where the refractive index control layer 31 is embedded, and an effective refractive index change in the semiconductor layer 30 with its thickness change is set smaller than that in the refractive index control layer 31 with its thickness change in a laminate 32 comprising the semiconductor layer 30 and the refractive index control layer 31.
|
