| 摘要 |
forming an oxide film(2) on a substrate(1), and forming a metal layer(40) for arrays being arranged at regular intervals; sputtering an isolation layer(50) formed on the metal layer(40); forming thin ion implanting layers(32,22) with different thickness on the metal layer(40) by implanting three valent or five valent imputity ion; forming each four valent dielectric layer(10) of step type and taper shape on the ion implanting layers(32,22) between the isolated isolation layers; forming ion implanting layers(32',22') of five valent or three valent on the dielectric layers(10) between the isolated isolation layers(50); and forming a respective metal layer(40) for a pin connection on respective ion implanting layer(32). The capacitor array is selectively used as the capacitor and the diode by forming the ion implanting layer for capacitor array in one side and diode layer with opposite polarity in other side.
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