| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory and its writing method in which an additional writing is conducted without conducting an erroneous writing even though there exists a memory cell to which data are written into its drain side while supplying a writing non-selective voltage using a local selfboost system. SOLUTION: When a local selfboost is to be conducted, electric charges obtained while boosting the potential of the channel section of a memory cell are supplied to a memory cell close to a source of a NAND string from not only a bit line BL but also from a source line SL. Since a writing non-selective voltage is boosted while supplying electric charges from the line SL also (a STEP3), a sufficient voltage is obtained to inhibit writing.</p> |
