发明名称 |
Semiconductor storage device having memory chips in a stacked structure |
摘要 |
Two memory chips each being subjected to memory accesses in 2-bit units are assembled into a stacked structure by placing their back surfaces one over the other, so as to make memory accesses in 4-bit units. A memory module is so constructed that a plurality of such semiconductor storage devices, in each of which two memory chips each being subjected to memory accesses in 2-bit units are assembled into a stacked structure by placing their back surfaces one over the other, so as to make memory accesses in 4-bit units, are mounted on a mounting circuit board which is square and which is formed with electrodes along one latus thereof.
|
申请公布号 |
US6566760(B1) |
申请公布日期 |
2003.05.20 |
申请号 |
US20000666063 |
申请日期 |
2000.09.19 |
申请人 |
HITACHI, LTD;HITACHI ULSI SYSTEMS, CO. LTD;HITACHI TOHBU SEMICONDUCTOR, LTD. |
发明人 |
KAWAMURA MASAYASU;NAKAMURA ATSUSHI;SAKAGUCHI YOSHIHIRO;KINOSHITA YOSHITAKA;TAKAHASHI YASUSHI;INOUE YOSHIHIKO |
分类号 |
G11C11/401;G11C5/00;G11C5/04;G11C8/12;H01L23/495;H01L23/50;H01L25/065;H01L25/10;H01L27/10;(IPC1-7):H01L23/02;H01L23/48 |
主分类号 |
G11C11/401 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|