| 摘要 |
A group of semiconductor layers of a first light emitting region(6) including an active layer(3), determined by a first wavelength of laser beam, sandwiched between two cladding layers(2) and(4) of which the band gap is greater than that of the active layer(3) are deposited on a semiconductor substrate 1. Similarly, another group of semiconductor layers of a second light emitting region(16) including an active layer(13), determined by a second wavelength of laser beam, sandwiched between two cladding layers(12) and(14) of which the band gap is greater than that of the active layer 13 are deposited via a contact layer(5) on the first light emitting region(6). The first and the second light emitting region(6) and (16) are aligned with each other along the perpendicular (vertical) to the semiconductor substrate(1). Accordingly, a multi-color semiconductor laser having multiple laser beam sources in their respective light emitting regions aligned along the vertical to the substrate can be fabricated by simple steps of production.
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