发明名称 |
Photocathode and electron tube |
摘要 |
This photocathode comprises: InP substrate 1; InAsx2P1-x2(0<x2<1) buffer layer 2; Inx1Ga1-x1As (1>x1>0.53) light-absorbing layer 3; InAsx3P1-x3 (0<x3<1) electron-emitting layer 4; InAsx3P1-x3 contact layer 5 formed on the electron-emitting layer 4; active layer 8 of an alkali metal or its oxide or fluoride formed on the exposed surface of electron-emitting layer 4; and electrodes 6 and 7.
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申请公布号 |
US6563264(B2) |
申请公布日期 |
2003.05.13 |
申请号 |
US20010842831 |
申请日期 |
2001.04.27 |
申请人 |
HAMAMATSU PHOTONICS K.K. |
发明人 |
NIIGAKI MINORU;HIROHATA TORU;MOCHIZUKI TOMOKO;KAN HIROFUMI |
分类号 |
H01J1/34;(IPC1-7):H01J40/18 |
主分类号 |
H01J1/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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