| 摘要 |
Disclosed is a method of protecting semiconductor areas while exposing a gate for processing on a semiconductor surface, the method comprising depositing a planarizing high density plasma layer of a silicon compound, selected from the group silicon oxide and silicon nitride, in a manner effective in leaving an upper surface of said gate exposed. Also disclosed is a method of processing short gates while protecting long gates on a semiconductor surface, the method comprising depositing a planarizing layer of a silicon compound, selected from the group silicon nitride and silicon oxide, up to substantially the same height as said gates, and processing said semiconductor surface.
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