| 摘要 |
A non-volatile semiconductor memory device comprising: a semiconductor substrate, memory cells, a region of memory cell array in which said memory cells are arranged in a matrix-like form, a region of peripheral circuit, a connecting region for connecting said region of memory cell array to said region of peripheral circuit, and conductive layers provided closest to said substrate with intervals between each other, wherein said intervals of said conductive layers are substantially equal to each other in said region of memory cell array and said connecting region, whereby when insulating films are formed and planarized after forming said conductive layers, it is possible to restrict producing of seams in the insulating films at stripped portions of the conductive layers.
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