发明名称 EPITAXIAL WAFER FOR LIGHT EMITTING DIODE, LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREFOR
摘要 PROBLEM TO BE SOLVED: To easily position to a current blocking part buried in an epitaxial wafer for a light emitting diode at the time of forming a surface side electrode of a current constriction type light emitting diode in which the current blocking part is formed on a substrate. SOLUTION: In the current constriction type LED having the current blocking part 2 in a GaAs substrate 1, recessed and projected parts (recessed parts 16 or projected parts) are prepared on the surface of the GaAs substrate 1 in a stage of forming the current blocking part 2, epitaxial layers (3, 4, 5) to be a light emitting part 6 are grown on it, recessed and projected parts (recessed parts 10 or projected parts) are left on a wafer surface as they are, and the surface side electrode 8 and the current blocking part 2 are positioned with the level difference as a mark.
申请公布号 JP2003133586(A) 申请公布日期 2003.05.09
申请号 JP20010332239 申请日期 2001.10.30
申请人 HITACHI CABLE LTD 发明人 SHIBATA KENJI;UNNO TSUNEHIRO;KONNO TAIICHIRO
分类号 H01L33/14;H01L33/22;H01L33/30 主分类号 H01L33/14
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