METHOD FOR MANUFACTURING HIGH QUALITY GAN SINGLE CRYSTALLINE SUBSTRATE

摘要

PURPOSE: A method for manufacturing a high quality GaN single crystalline substrate is provided to grow GaN single crystal without lattice defect by HVPE (hydride vapor phase epitaxy) method using GaN single crystal grown by supply of activated nitrogen gas as a growing substrate. CONSTITUTION: The method for manufacturing a high quality GaN single crystalline substrate comprises a growing substrate forming process of forming GaN single crystal by flowing activated nitrogen gas to the side of the growing crucible, wherein the activated nitrogen gas is generated as NaN3 is being decomposed through a subsidiary crucible which is connected to the growing crucible by a connection pipe and sealed with NaN3 being contained in the subsidiary crucible after sealing a growing crucible with a mixture of gallium (Ga) and NaN3 being formed inside the growing crucible; a single crystalline layer forming process of forming a GaN single crystalline layer(201) on the upper surface of the growing substrate(200) using HVPE (hydride vapor phase epitaxy) method after using a mirror surface of the GaN single crystal formed in the substrate forming process as a growing surface and maintaining temperature of the substrate to 1020 to 1050 deg.C; and a growing substrate removing process of removing the growing substrate(200) formed in the substrate forming process after the single crystalline layer forming process, wherein surface treatment process is proceeded after the growing substrate removing process.