Projection exposure apparatus for microlithography

摘要

The invention relates to a projection exposure apparatus for microlithography at lambd<200 nm. The projection exposure apparatus for microlithography has a light source with a wavelength less than 200 nm and a bandwidth, which is less than 0.3 pm, preferably less than 0.25 pm and greater than 0.1 pm. The projection exposure apparatus includes an exclusively refractive projection objective which is made out of a single lens material. The projection objective provides for a maximum image height in the range of 12 mm to 25 mm, an image side numerical aperture in the range of 0.75 up to 0.95 and a monochromatic correction of the wavefront of rms<15% of the wavelength of the light source.