发明名称 |
Transistor structure with thick recessed source/drain structures and fabrication process of same |
摘要 |
An improved transistor structure that decreases source/drain (S/D) resistance without increasing gate-to-S/D capacitance, thereby increasing device operation. S/D structures are formed into recesses formed on a semiconductor wafer through a semiconductor layer and a first layer of a buried insulator having at least two layers. A body is formed from the semiconductor layer situated between the recesses, and the body comprises a top body surface and a bottom body surface that define a body thickness. Top portions of the S/D structures are within and abut the body thickness. An improved method for forming the improved transistor structure is also described and comprises: forming recesses through a semiconductor layer and a first layer of a buried insulator so that a body is situated between the recesses; and forming S/D structures into the recesses so that top portions of the S/D structures are within and abut a body thickness.
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申请公布号 |
US2003085424(A1) |
申请公布日期 |
2003.05.08 |
申请号 |
US20010682957 |
申请日期 |
2001.11.02 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BRYANT ANDRES;JAFFE MARK D. |
分类号 |
H01L21/336;H01L21/84;H01L27/12;H01L29/417;H01L29/423;H01L29/786;(IPC1-7):H01L27/01;H01L31/039 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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