发明名称 Electron beam test system and electron beam test method
摘要 An electron beam test system which can determine whether a potential is high or low for a DC signal or a signal having no potential change before the time of observation. The electron beam test system obtains potential contrast data for analysis by irradiating electron beam to a semiconductor integrated circuit device which is an analysis object. This system has a tester which supplies a test pattern signal for analysis to the semiconductor integrated circuit device and holds the supplied test pattern signal at a given time; an electron gun which irradiates electron beam to the semiconductor integrated circuit device in response to the hold; and a detector which detects the potential contrast data of the semiconductor integrated circuit device which is irradiated with electron beam.
申请公布号 US2003088379(A1) 申请公布日期 2003.05.08
申请号 US20020280018 申请日期 2002.10.25
申请人 SEIKO EPSON CORPORATION 发明人 ISHII TATSUYA
分类号 G01R1/06;G01Q60/30;G01R31/302;G01R31/307;H01L21/66;(IPC1-7):G06F19/00;G01R27/28;G01R31/00;G01R31/14 主分类号 G01R1/06
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