发明名称 |
Electron beam test system and electron beam test method |
摘要 |
An electron beam test system which can determine whether a potential is high or low for a DC signal or a signal having no potential change before the time of observation. The electron beam test system obtains potential contrast data for analysis by irradiating electron beam to a semiconductor integrated circuit device which is an analysis object. This system has a tester which supplies a test pattern signal for analysis to the semiconductor integrated circuit device and holds the supplied test pattern signal at a given time; an electron gun which irradiates electron beam to the semiconductor integrated circuit device in response to the hold; and a detector which detects the potential contrast data of the semiconductor integrated circuit device which is irradiated with electron beam.
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申请公布号 |
US2003088379(A1) |
申请公布日期 |
2003.05.08 |
申请号 |
US20020280018 |
申请日期 |
2002.10.25 |
申请人 |
SEIKO EPSON CORPORATION |
发明人 |
ISHII TATSUYA |
分类号 |
G01R1/06;G01Q60/30;G01R31/302;G01R31/307;H01L21/66;(IPC1-7):G06F19/00;G01R27/28;G01R31/00;G01R31/14 |
主分类号 |
G01R1/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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