Integrated semiconductor light sensor device and corresponding manufacturing process

摘要

The invention relates to a process for manufacturing a light sensor device in a standard CMOS process, including at least the following phases: implanting active areas on a semiconductor substrate to obtain at least a first, a second and a third integrated region of corresponding photosensors; forming a stack of layers of different thickness and refractive index layers over the photosensors to provide an interferential filter for said photosensors. The stack is obtained by a deposition of a first oxide stack including a first, a second and a third oxide layer over at least one photosensor; moreover, this third oxide layer is obtained by a deposition step of an protecting undoped premetal dielectric layer.