| 摘要 |
The present invention is related to a method of monitoring a semiconductor wafer (10) plasma etch process, comprising the steps of projecting light (12) on a wafer surface (14) during plasma etching, so that the light (12) is scattered by the wafer surface (14), detecting the scattered light (16), determining intensities of the detected light with dependence on at least one varying parameter, thereby creating a spectrum, and comparing the spectrum with stored data. The present invention further relates to a system for monitoring a semiconductor wafer plasma etch process. |
