发明名称 |
RADIATION DETECTION DEVICE |
摘要 |
PURPOSE: To provide a radiation detection device to block through-discharge due to the concentration of an electrical field at the edge of a voltage applying electrode formed on the surface of a radiation sensitive semiconductor film and capable of assuring a stable detection operation for a long period. CONSTITUTION: A high withstand voltage insulation material 3 is formed between a radiation sensitive amorphous semiconductor film 1 adaptable to a tendency for an increase in an area and the edge 2A of a voltage applying electrode 2. As a result, the concentration of an electrical field to the edge 2A of the voltage applying electrode is eliminated, and the preliminary phenomenon of through discharge and discharge breakdown do not occur.
|
申请公布号 |
KR20030033931(A) |
申请公布日期 |
2003.05.01 |
申请号 |
KR20020063376 |
申请日期 |
2002.10.17 |
申请人 |
SHIMADZU CORPORATION |
发明人 |
SATO KENJI;TOKUDA SATOSHI |
分类号 |
G01T1/24;H01L27/14;H01L27/146;H01L31/09;H04N5/30;H04N5/335;H04N5/369;H04N5/374;(IPC1-7):G01T1/24 |
主分类号 |
G01T1/24 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|