发明名称 RADIATION DETECTION DEVICE
摘要 PURPOSE: To provide a radiation detection device to block through-discharge due to the concentration of an electrical field at the edge of a voltage applying electrode formed on the surface of a radiation sensitive semiconductor film and capable of assuring a stable detection operation for a long period. CONSTITUTION: A high withstand voltage insulation material 3 is formed between a radiation sensitive amorphous semiconductor film 1 adaptable to a tendency for an increase in an area and the edge 2A of a voltage applying electrode 2. As a result, the concentration of an electrical field to the edge 2A of the voltage applying electrode is eliminated, and the preliminary phenomenon of through discharge and discharge breakdown do not occur.
申请公布号 KR20030033931(A) 申请公布日期 2003.05.01
申请号 KR20020063376 申请日期 2002.10.17
申请人 SHIMADZU CORPORATION 发明人 SATO KENJI;TOKUDA SATOSHI
分类号 G01T1/24;H01L27/14;H01L27/146;H01L31/09;H04N5/30;H04N5/335;H04N5/369;H04N5/374;(IPC1-7):G01T1/24 主分类号 G01T1/24
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