Magnetic memory using perpendicular magnetization film

摘要

In a magnetoresistive element of a magnetic memory, a inversion field Hc of at least a first magnetic layer is given by 1 $\mathrm{Hc}=\frac{2it\left(\mathrm{Ku}-2it\mathrm{pi}itit{\mathrm{Ms}}^{2}itf\right)}{\mathrm{Ms}}$ where Ku and Ms are the perpendicular magnetic anisotropy constant and saturation magnetization of the first magnetic layer. The inversion field Hc is set smaller than a magnetic field generated by a magnetic field generation mechanism. Letting T be the film thickness of the first magnetic layer and W be the width and length, f is a factor given by f=7x10-13(T/W)4-2x10-9(T/W)3+3x10-6(T/W)2-0.0019(T/W)+0.9681 A magnetic memory manufacturing method is also disclosed.