| 摘要 |
PROBLEM TO BE SOLVED: To provide a DRAM element and its manufacturing method which provides a sufficient channel length enough to reduce a leak current. SOLUTION: The memory element is composed of a substrate having a plurality of deep trenches arranged in an array, a plurality of deep trench capacitors formed in the deep trenches one to one and having storage electrodes, capacitor dielectrics and capacitor plates, an isolation layer covering the trench capacitors and having first contact holes to form first doping regions, control gates formed above the capacitors, a gate insulation layer covering the sidewalls and tops of the control gates, and a well type silicon layer filling up second contact holes and having second doping regions. |
