| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film capacitor having superior breakdown voltage characteristics and Q characteristics in a high-frequency region, a chip capacitor and an LC filter using the same, and to provide its manufacturing method. SOLUTION: This thin film capacitor is composed of a board, a lower electrode, a metal oxide dielectric body, and an upper electrode. Furthermore, the metal oxide dielectric body is composed of an amorphous layer rich in an amorphous component, and a crystal layer rich in a crystalline component. These two components are of the same composition. A chip capacitor and an LC filter are manufactured using the same, and a manufacturing method is a characteristically performed.
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