A widely tunable semiconductor laser with a grating structure

摘要

A semiconductor laser (22) with a semiconductor substrate (11), a laser layer (13) with a wide range of gain arranged on the semiconductor substrate, several segments of a waveguide ridge (15) arranged at a distance from the laser layer, and several strip-shaped grating structures (23) arranged lateral to the segments of the ridge waveguide. The lattice structure (23) includes two structural regions (24, 25) which are arranged on both sides of the waveguide ridge (15) and are formed at a distance from the laser layer (13) above the laser layer (13). A process for the production of such a semiconductor laser is also disclosed.