Binary non-crystalline oxide analogs of silicon dioxide for use in gate dielectrics

摘要

The invention generally relates to oxides that may be used in conjunction with integrated circuit devices. The oxides are non-crystalline. The oxides are represented by the formula: ABO4, wherein A is an element selected form Group IIIA of the periodic table; and B is an element selected form Group VB of the periodic table. The oxides may be employed in field effect transistors as tin gate insulating layers having high dielectric constants.