发明名称 |
Ultra compact DRAM cell and method of making |
摘要 |
A structure and method of manufacture is disclosed herein for a semiconductor memory cell having size of 4.5 F2 or less, where F is the minimum lithographic dimension. The semiconductor memory cell includes a storage capacitor formed in a trench, a transfer device formed in a substantially electrically isolated mesa region extending over a substantial arc of the outer perimeter of the trench, a buried strap which conductively connects the transfer device to the storage capacitor, wherein the transfer device has a controlled conduction channel located at a position of the arc removed from the buried strap.
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申请公布号 |
US6552378(B1) |
申请公布日期 |
2003.04.22 |
申请号 |
US19990385931 |
申请日期 |
1999.08.30 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;INFINEON TECHNOLOGIES AG |
发明人 |
HOENIGSCHMID HEINZ;HSU LOUIS LU-CHEN;MANDELMAN JACK ALLAN |
分类号 |
H01L27/10;H01L21/8242;H01L27/108;(IPC1-7):H01L27/108 |
主分类号 |
H01L27/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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