THIN METAL OXIDE FILM AND PROCESS FOR PRODUCING THE SAME
摘要
A process for producing a thin film of a crystalline metal oxide, which comprises depositing a film of a metal oxide which is mainly amorphous and then subjecting it to a post−treatment in which the film is exposed to a low−temperature plasma in a high−frequency electric field at a temperature not higher than 180°C; and a thin film of a crystalline metal oxide produced by the process. By the process, a thin crystalline metal oxide film which is dense and homogeneous can be formed on a substrate at a low temperature without the need of a positive heat treatment. A thin metal oxide film having desirable properties can hence be formed even on a substrate having relatively low heat resistance without impairing the material properties of the substrate.
申请公布号
WO03031673(A1)
申请公布日期
2003.04.17
申请号
WO2002JP10181
申请日期
2002.09.30
申请人
ADVANCED SYSTEMS OF TECHNOLOGY INCUBATION;FUKUHISA, KOJI;NAKAJIMA, AKIRA;SHINOHARA, KENJI;WATANABE, TOSHIYA;OHSAKI, HISASHI;SERIKAWA, TADASHI