发明名称 THIN METAL OXIDE FILM AND PROCESS FOR PRODUCING THE SAME
摘要 A process for producing a thin film of a crystalline metal oxide, which comprises depositing a film of a metal oxide which is mainly amorphous and then subjecting it to a post−treatment in which the film is exposed to a low−temperature plasma in a high−frequency electric field at a temperature not higher than 180°C; and a thin film of a crystalline metal oxide produced by the process. By the process, a thin crystalline metal oxide film which is dense and homogeneous can be formed on a substrate at a low temperature without the need of a positive heat treatment. A thin metal oxide film having desirable properties can hence be formed even on a substrate having relatively low heat resistance without impairing the material properties of the substrate.
申请公布号 WO03031673(A1) 申请公布日期 2003.04.17
申请号 WO2002JP10181 申请日期 2002.09.30
申请人 ADVANCED SYSTEMS OF TECHNOLOGY INCUBATION;FUKUHISA, KOJI;NAKAJIMA, AKIRA;SHINOHARA, KENJI;WATANABE, TOSHIYA;OHSAKI, HISASHI;SERIKAWA, TADASHI 发明人 FUKUHISA, KOJI;NAKAJIMA, AKIRA;SHINOHARA, KENJI;WATANABE, TOSHIYA;OHSAKI, HISASHI;SERIKAWA, TADASHI
分类号 C01B13/14;C23C8/02;C23C8/36;C23C14/08;C23C14/58;C23C18/14;C23C26/00;H01L21/314;H01L21/316;H01L31/0224;H01L31/18;(IPC1-7):C23C8/36 主分类号 C01B13/14
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