发明名称 Photosemiconductor device and method for fabricating the same
摘要 <p>A photosemiconductor device comprises a plurality of quantum dots 22, the plural quantum dots 22 having non-uniform sizes. Quantum dots of non-uniform size are formed in a low area ratio, whereby the photosemiconductor device can have a wide gain band. &lt;IMAGE&gt;</p>
申请公布号 EP1302810(A2) 申请公布日期 2003.04.16
申请号 EP20020252247 申请日期 2002.03.27
申请人 FUJITSU LIMITED 发明人 AKIYAMA, TOMOYUKI
分类号 G02F1/39;H01S5/343;G02F1/355;H01L21/203;H01L29/12;H01L31/0352;H01S5/34;H01S5/40;H01S5/50;(IPC1-7):G02F1/39;H01L31/035 主分类号 G02F1/39
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