Capacitor having a structure capable of restraining deterioration of dielectric film, semiconductor device having the capacitor and method of manufacturing the same

摘要

A semiconductor device having a structure capable of restraining deterioration of a dielectric film of a capacitor even when annealing is performed in a hydrogen-containing atmosphere. This semiconductor device includes one electrode or a plurality of dispersion electrodes formed in a dispersed manner above a semiconductor substrate, and a plate electrode commonly facing the one electrode or dispersion electrodes via respective dielectric films. This plate electrode includes a lower conductive layer formed on the dielectric films, a barrier layer formed on the lower conductive layer and an upper conductive layer formed on the barrier layer.