| 摘要 |
A method for cleaning a contact area of a metal line wherein a nitride barrier layer is formed on a sidewall of an insulating interlayer within the contact area by introducing the nitrogen-based radical to the contact area, whereby it is possible to prevent a low dielectric insulating interlayer from becoming deteriorated by the redeposition of metal ions and by hydrogen radical activated during reactive cleaning, thereby maintaining a low dielectric characteristic of the insulating interlayer. The method includes the steps of sequentially depositing the metal line and an insulating interlayer on a substrate, forming the contact area by selectively removing the insulating interlayer, forming a nitride barrier layer on the sidewalls of the insulating interlayer by introducing the nitrogen-based radical into the contact area, removing residue from the surface of the metal line by sputtering Ar<+> ions into the contact area, removing a metal oxide layer formed at the exposed metal line by reactive cleaning of the contact area, and removing byproducts formed at the sidewall of the insulating interlayer by performing a plasma surface process applying the nitrogen-based radical to the contact area.
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