发明名称 DEPOSITION METHOD AND DEPOSITION SYSTEM FOR OPTICAL THIN FILM
摘要 PROBLEM TO BE SOLVED: To provide a deposition method which is capable of efficiently forming an optical thin film consisting of an oxidized film without requiring systems of intricate structures and process steps over multiple stages and a deposition system for the same. SOLUTION: A deposition process step of depositing Ti on a glass substrate 4 by using a reactive sputtering process using a gaseous mixture composed of O2 or O3 and Kr as reaction gas and sputtering Ti targets 5a and 5b by sputtering gas consisting of gaseous Ar and oxidation process step of oxidizing the thin film on the substrate 4 by irradiating the reaction gas with microwaves by a microwave excitation plasma source 8 to excite the O2 or O3 and Kr to a plasma state are alternately repeated.
申请公布号 JP2003105534(A) 申请公布日期 2003.04.09
申请号 JP20010297240 申请日期 2001.09.27
申请人 ULVAC JAPAN LTD 发明人 SUZUKI TOSHIHIRO;TANI NORIAKI;IKEDA SATOSHI;KAWAMURA HIROAKI;ISHIBASHI AKIRA
分类号 G02B5/18;C23C14/34;(IPC1-7):C23C14/34 主分类号 G02B5/18
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