发明名称 CIRCUIT SUBSTRATE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a circuit substrate which has a high joining strength of a wiring circuit layer to a sintered material and which does not bring about a fault even when a plating layer is formed, and to provide a method for inexpensively manufacturing the same. SOLUTION: The circuit substrate comprises an insulating substrate 1 containing a silicon nitride as a main crystal phase, a flat pattern layer 3 provided on the main surface 2 of an insulating substrate 1, and a wiring circuit layer 5 provided on an opposed main surface 4 disposed at an opposite side to the main surface 2, In the substrate, the surface roughness Rmax of the main surface 2 is 5 to 10μm, and the main surface 4 has smaller surface roughness Rmax than that of the main surface 2.
申请公布号 JP2003101217(A) 申请公布日期 2003.04.04
申请号 JP20010294749 申请日期 2001.09.26
申请人 KYOCERA CORP 发明人 HASEGAWA TOMOHIDE;MAKINO AKIHISA
分类号 H05K1/03;H01L23/12;H01L23/13;H01L23/15;H05K3/38;(IPC1-7):H05K3/38 主分类号 H05K1/03
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