| 摘要 |
PROBLEM TO BE SOLVED: To overcome the problem of the impossibility of highly reliable jointing at a low temperature. SOLUTION: A silicon oxide film 25 containing phosphorus and/or boron is formed on a jointing surface of a second substrate 32; and a first substrate 31 and the second substrate 32 are heat-treated and joined together, after being superposed together in an atmosphere of an inert gas.
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