Semiconductor device of multi-wiring structure and method of manufacturing the same

摘要

A plurality of wiring layers (11, 12, 13) are laminated on an LSI chip. Each wiring layer includes an electrode (17) to which is applied a mechanical pressure, a first insulating film (16) formed in a region where it is necessary to have a high mechanical strength and having the electrode (17) formed therein, a second insulating film (14) formed in the same layer as the layer of the first insulating film (16) and formed in a region where a mechanical strength higher than that of the first insulating layer (16) is not required, and a wiring layer (15) formed on the surface of the second insulating film (14).