| 摘要 |
PURPOSE: A method for manufacturing a semiconductor pressure sensor is provided to decrease the size of the sensor for increasing the number of the sensors at a wafer by carrying out a multi-step etching process. CONSTITUTION: A wafer forming process is performed by using the first and second silicon wafer(11,13) for forming a silicon-directly-attached wafer. A plurality of piezoresistive parts(14) are formed at the upper portion of the silicon-directly-attached wafer. A diaphram is formed at the lower portion of the resultant structure by carrying out a multi-step etching process. At this time, the multi-step etching process is completed by sequentially carrying out an anisotropic dry etching process for forming a vertical groove, an isotropic dry etching process for extending the vertical groove, and an anisotropic wet etching process for etching the groove surface to a predetermined direction.
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