METHOD FOR ETCHING ORGANIC INSULATION FILM

摘要

PURPOSE: A method for etching an organic insulation film is provided to make the bottom surfaces of trenches and holes for electrical wiring flat without using any etch stop layer by controlling adhesion of reaction byproducts in a process chamber and by preventing a micro trench. CONSTITUTION: A sample to be etched on which a low dielectric constant organic insulation film is formed is etched by generating a plasma from hydrogen gas and nitrogen gas or ammonia gas and by controlling the gas flow rate and pressure so that the light emission spectral intensity ratio of hydrogen atom and cyan molecule in the plasma comes to a prescribed value.