| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a silicon crystal thin film semiconductor device which has a quickly formable silicon crystal film of a high crystallization rate and realizes high efficiency photovoltaic characteristics. SOLUTION: The silicon crystal thin film photovoltaic element 100 being a silicon crystal thin film semiconductor device is formed by forming a metal electrode 2 and a transparent conductive film 3 on a quartz substrate 1, forming at least two kinds of conductivities crystal silicon layers 4a-6a on the conductive film 3, forming an amorphous silicon layer 8 on the crystal silicon layer 6a, forming an ITO transparent conductive film 9 on the silicon layer 8, and forming an Al electrode 10 on the transparent film 9.</p> |
