| 摘要 |
PROBLEM TO BE SOLVED: To raise the supremum of current density of wirings without largely changing materials, structure, or the like so as to be able to cope with high integration of storage elements constituting a magnetic memory device and microfabrication of wirings. SOLUTION: The direction of a current for generating a magnetic field allowed to flow through wirings for generating an auxiliary magnetic field for recording in the direction of a magnetization hard axis of a storage region of a magnetic resistance effect type storage element is controlled to be made bidirectional. Thereby, since the flowing direction of current is not fixed to one direction, deterioration and discontinuity due to electro-migration are hardly caused, thus reliability is enhanced and high density can be realized.
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