Protection device with a silicon-controlled rectifier

摘要

A semiconductor device for lowering a triggering voltage includes a semiconductor substrate with a first conductivity; a semiconductor region formed in the substrate having a second conductivity; a first region formed in the substrate, having the first conductivity and being apart from the semiconductor region; a second region formed in the substrate having the second conductivity and being spaced apart from the semiconductor region and first region; a third region formed in the substrate, having the second conductivity and being spaced apart from the semiconductor region, the first and second regions; a fourth region formed in the semiconductor region, having the second conductivity and being connected to the third region through a conductive material; a fifth region formed in the semiconductor region, having the first conductivity and being spaced apart from the fourth region; and a sixth region formed in the semiconductor region, having the second conductivity and being spaced apart from the fourth and fifth regions.