| 摘要 |
PROBLEM TO BE SOLVED: To provide an ion implantation method and an ion implantation apparatus for forming a plurality of regions having different amounts of injection on one wafer using a simple method, and at the same time, reducing manufacturing costs. SOLUTION: Ion beams that are scanned by electrostatic scanning in an X direction are applied to a wafer 16. The amount of ion implanted to the wafer 16 is measured by a beam detection section 20. At the same time, an electrostatic scan control section 14B performs control so that the scanning speed in ion beams becomes constant in each of regions a1 -d1 as shown in Figure 4 (C) based on the measured amount of ion implantation, and performs control so that the scanning speed changes among the different regions a1 -d1 , thus forming a plurality of regions a1 -d1 having different amounts of ion implantation in the X direction of the wafer 16.
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