发明名称 VERTICAL RESONATOR-TYPE SEMICONDUCTOR LIGHT EMITTING ELEMENT
摘要 PROBLEM TO BE SOLVED: To solve the problem that a vertical resonator-type semiconductor light emitting element has high thermal resistance because the semiconductor light emitting element is small in size, and a DBR mirror forming a reflecting mirror is low in thermal conductivity, therefore an active layer rises in temperature by heat released when a current is applied, and it is difficult for the semiconductor light emitting element to output high power. SOLUTION: A groove is cut in around a light emitting part as deep as a current constriction part, and an electrode is formed direct on the groove. By this setup, a distance from a heat releasing part to the electrode is shortened, and heat is easily conducted in a lateral direction.
申请公布号 JP2003086895(A) 申请公布日期 2003.03.20
申请号 JP20010279859 申请日期 2001.09.14
申请人 TOSHIBA CORP 发明人 TAKAOKA KEIJI
分类号 H01S5/183;(IPC1-7):H01S5/183 主分类号 H01S5/183
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