DETERMINING METHOD OF MANUFACTURING CONDITION

摘要

PROBLEM TO BE SOLVED: To determine the manufacturing condition of a wafer having a desired COP free depth in a short time and at a low cost. SOLUTION: A heating temperature and a holding time in a heat treatment stage and a growing speed and temperature gradient in an ingot manufacturing stage are determined based on the group of the pieces of ingot manufacturing condition data obtaining a COP size formed on an ingot calculated based on the growing speed and the temperature gradient in the ingot manufacturing stage by Czochralski method and a group of the pieces of heat treatment condition data obtaining the COP free depth formed on a wafer surface part calculated based on the heat treatment temperature of the wafer and its holding time in the heat treatment stage of the wafer and the COP size formed at the wafer.